BDP947_BDP949_BDP953
Silicon NPN Transistors
• For AF driver and output stages
4
• High collector current
3
2
• High current gain
1
• Low collector-emitter saturation voltage
• Complementary types: BDP948, BDP950,
BDP954 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
BDP947
BDP947 1=B
2=C
3=E
4=C
-
-
SOT223
BDP949
BDP949 1=B
2=C
3=E
4=C
-
-
SOT223
BDP953
BDP953 1=B
2=C
3=E
4=C
-
-
SOT223
1
Package
2011-10-05
BDP947_BDP949_BDP953
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BDP947
45
BDP949
60
BDP953
100
Collector-base voltage
Unit
VCBO
BDP947
45
BDP949
60
BDP953
120
Emitter-base voltage
VEBO
5
Collector current
IC
3
Peak collector current, tp ≤ 10 ms
ICM
5
Base current
IB
200
Peak base current, tp ≤ 10 ms
IBM
500
Total power dissipation-
Ptot
5
W
150
°C
A
mA
TS ≤ 100 °C
Junction temperature
Tj
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
2
Value
Unit
≤ 10
K/W
2011-10-05
BDP947_BDP949_BDP953
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V(BR)CEO
IC = 10 mA, IB = 0 , BDP947
45
-
-
IC = 10 mA, IB = 0 , BDP949
60
-
-
IC = 10 mA, IB = 0 , BDP953
100
-
-
IC = 100 µA, IE = 0 , BDP947
45
-
-
IC = 100 µA, IE = 0 , BDP949
60
-
-
IC = 0 , IE = 100 µA, BDP953
120
-
-
5
-
-
Collector-base breakdown voltage
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 45 V, IE = 0
-
-
0.1
VCB = 45 V, IE = 0 , TA = 150 °C
-
-
20
-
-
100
Emitter-base cutoff current
IEBO
nA
VEB = 4 V, IC = 0
DC current gain2)
-
hFE
IC = 10 mA, VCE = 5 V
25
-
-
IC = 500 mA, VCE = 1 V
100
-
475
IC = 2 A, VCE = 2 V, BDP947, BDP949
50
-
-
IC = 2 A, VCE = 2 V, BDP953
15
-
-
VCEsat
-
-
0.5
VBEsat
-
-
1.3
fT
-
100
-
MHz
Ccb
-
25
-
pF
Collector-emitter saturation voltage2)
V
IC = 2 A, IB = 0.2 A
Base emitter saturation voltage2)
IC = 2 A, IB = 0.2 A
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse
test: t < 300µs; D < 2%
3
2011-10-05
BDP947_BDP949_BDP953
DC current gain hFE = ƒ(IC)
VCE = 2 V
Collector-emitter saturation voltage
IC = ƒ(VCEsat ), hFE = 10
10 4
10 3
mA
100°C
-
25°C
10 3
-55°C
IC
hFE
10 2
100°C
25°C
-50°C
10 2
10 1
10 1
10 0 0
10
10
1
10
2
10
3
mA 10
10 0
0
4
0.1
0.2
0.3
V
0.4
IC
Base-emitter saturation voltage
Collector current IC = ƒ(VBE)
IC = (VBEsat), hFE = 10
VCE = 2 V
10 4
10 4
mA
mA
10 3
IC
-50°C
25°C
100°C
-50°C
25°C
100°C
IC
10 3
10 2
10 2
10 1
10 1
10 0
0
0.6
VCEsat
0.2
0.4
0.6
0.8
1
V
10 0
0
1.3
VBEsat
0.2
0.4
0.6
0.8
1
V
1.3
VBE
4
2011-10-05
BDP947_BDP949_BDP953
Collector cutoff current ICBO = ƒ(TA)
VCB = 45 V
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 5
nA
500
pF
CCB(CEB )
ICB0
10 4
10 3
max
10 2
400
350
300
250
CEB
200
10 1
150
typ
100
10 0
50
10 -1
0
CCB
20
40
60
80
100
120 °C
0
0
150
4
8
12
16
TA
V
22
VCB(VEB
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 2
5.5
W
4.5
RthJS
Ptot
4
3.5
10 1
3
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
2.5
2
10 0
1.5
1
0.5
0
0
15
30
45
60
75
90 105 120 °C
10 -1 -6
10
150
ts
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
2011-10-05
BDP947_BDP949_BDP953
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
Ptotmax/PtotDC
10 3
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
6
2011-10-05
Package SOT223
1.6±0.1
6.5 ±0.2
A
0.1 MAX.
3 ±0.1
7 ±0.3
3
2
0.5 MIN.
1
2.3
0.7 ±0.1
B
15˚ MAX.
4
3.5 ±0.2
Package Outline
BDP947_BDP949_BDP953
4.6
0.28 ±0.04
0...10˚
0.25 M A
0.25 M B
Foot Print
1.4
4.8
1.4
3.5
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.3 MAX.
7.55
12
8
Pin 1
1.75
6.8
7
2011-10-05
BDP947_BDP949_BDP953
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
8
2011-10-05